MSM80C49 |
RFQ for MSM80C49 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MSM80C49 | - | 00 | QFP |
Features |
| • Lower power consumption enabled by CMOS silicon gate process• Completely static operation• Improved power-down feature• Instruction cycle : 1.36 s (11 MHz) VCC=4.5 to 6.0 V (MSM80C48/49) 2.5 s (6 MHz) VCC=3.5 to 6.0 V (MSM80C50)• 111 instructions• All instructions are usable even during execution of external ROM instructions.• Operation facility Addition, logical operations, and decimal adjust• Program memory (ROM) : 1K words ¥ 8 bits (MSM80C48): 2K words ¥ 8 bits (MSM80C49): 4K words ¥ 8 bits (MSM80C50)• Data memory (RAM) : 64 words ¥ 8 bits (MSM80C48): 128 words ¥ 8 bits (MSM80C49): 256 words ¥ 8 bits (MSM80C50)• Two sets of working registers• External and timer interrupts• Two test inputs• Built-in 8-bit timer counter• Extendable external memory and I/O ports• I/O port Input-output port : 2 ports*8 bits Data bus input-output port : 1 port * 8 bits• Single-step execution function• Wide range of operating voltage, from + 2.5 V to + 6 V of VCC• High noise margin action• Compatible with Intel's 8048, 8049 and 8050• Package 40-pin plastic DIP (DIP40-P-600-2.54) : (MSM80C48-¥¥¥RS) (MSM80C49-¥¥¥RS)& |
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Parameter |
Symbol |
Condition |
Rating |
Unit |
|
Power Supply Voltage |
VDD |
Ta = 25°C |
0.5 to 7 |
V |
|
Input Voltage |
VIN |
Ta = 25°C |
0.3 to VCC +0.5 |
V |
|
Storage Temperature |
TSTG |
PDF / DatasheetRelated PDFRelated Models |
